¡¤JP-10B Sputtered Thin-Film Pressure Transducer
The thin-film strain gage, prepared directly on the substrate (elastic element made of 17-4PH)with ion-beam sputtering deposition and etching process, consists of several layers of thin-films, and the total thickness of the gage is no more than 4mm. The inorganic configuration of the sensing element overcomes the problems of hysteresis, creep and aging caused by the organic glue bonded in strain-gage sensors.
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Performance specification
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Rated Capacity
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JP-10B |
0¡«10,16,20,25,30,40,50,60,80,100,150 | MPa | |
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Rated Output |
1.2¡«2 | mV/V | ||
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Basic Error |
¡À0.2; ¡À0.3; ¡À0.5 | %F.S | ||
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Operating Temperature Range |
-40¡«+175; -30¡«+125 | ¡æ | ||
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Temperature Effect On Zero |
¡À0.1¡«¡À0.2 | %F.S /10¡æ | ||
| Temperature Effect On Output | ¡À0.25 | %F.S /10¡æ | ||
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Excitation |
5¡«12(High accuracy DC power) | VDC | ||
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Insulation Resistance |
1000 | M¦¸/100VDC | ||
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Input Resistance |
1¡«3.5 | k¦¸ | ||
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Output Resistance |
1¡«3.5 | k¦¸ | ||
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Zero Output |
< 0.5 | mV | ||
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Overload Capacity |
120 | %F.S | ||
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Time Effect On Zero |
¡Ü¡À0.1 | %F.S/year | ||
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Time Effect On Output |
¡À0.2 | %F.S/year | ||
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Electrical Connection
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Leads designation
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Pin No.
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| Power + |
1
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| Signal + |
2
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| Signal - |
3
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| Power - |
4
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